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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 34 1.0 UNIT V V A A W V A s
Ths 25 C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 34 150 150 UNIT V V A A A A W C C
Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsus VCEsat VBEsat hFE PARAMETER Collector cut-off current
1
CONDITIONS
MIN. 700 6
TYP. 13
MAX. 1.0 2.0 10 1.0 1.1 30
UNIT mA mA mA V V V -
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 6.0 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A Base-emitter saturation voltage IC = 4.5 A; IB = 2 A DC current gain IC = 100 mA; VCE = 5 V
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL fT CC PARAMETER Transition frequency at f = 5 MHz Collector capacitance at f = 1MHz Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IC = 0.1 A;VCE = 5 V VCB = 10 V ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 H; -VBB = -4 V; -IBM = 2.25 A TYP. 7 125 MAX. UNIT MHz pF
6.5 0.7
-
s s
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
ICsat
+ 50v 100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts IBend
Vertical 100R 6V 30-60 Hz 1R
t
- IBM
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal adjust for ICsat
1mH
250 200
100
IBend
LB
D.U.T. 12nF
BY228
0 VCE / V
-VBB
min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Switching times test circuit.
TRANSISTOR IC DIODE
ICsat
100
h FE
BU508AD
t
IB
IBend t 20us 26us 64us
10
VCE
t
1 0.1
1 IC/A
10
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
VCESAT / V
BU508AD
10
Zth K/W
bu508ax
1
0.5 0.2 0.1 0.05 0.02
0.1
0.01 0
P D
tp
D=
tp T t
1.0E+1
T
0.001 1.0E-07 1.0E-05 t/s 1E-03 1.0E-01
0.1
1
IC / A
10
Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
BU508AD
Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
Normalised Power Derating
with heatsink compound
1.4
VBESAT / V
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
1.2 IC = 6A 1 IC = 4.5A IC = 3A 0.8
0.6
0
0 1 2 3
20
40
60
IB / A
4
80 Ths / C
100
120
140
Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
BU508AD
Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)
VCESAT/V 10
1 IC = 6A
IC = 4.5A IC = 3A 0.1 0.1 1 IB/A 10
Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
100
IC / A
100
IC / A
= 0.01
= 0.01
tp =
ICM max 10 IC max
II
ICM max 10 IC max
II
tp =
10 us
10 us
Ptot max
Ptot max
1
100 us
1
100 us
I
1 ms
I
1 ms
0.1
10 ms DC
0.1
10 ms DC
0.01 1 10 100 VCE / V 1000
0.01 1 10 100 VCE / V 1000
Fig.12. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
Fig.13. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and 30 5 newton force on the centre of the envelope.
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
MECHANICAL DATA
Dimensions in mm Net Mass: 5.5 g
15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2
5.2 max
o 45
seating plane
3.5
3.5 max not tinned
15.7 min 1 2.1 max 2 3 1.2 1.0
5.45
0.7 max 0.4 M 2.0
5.45
Fig.14. SOT199; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1998
7
Rev 1.200

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